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Part Datasheet Search > MOSFETs > Infineon > IRFB4127PBF Datasheet PDF
IRFB4127PBF
Part 3D Model
$ 0.938
IRFB4127PBF Datasheet PDF (8 Pages)
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IRFB4127PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
375 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.017 Ω
Polarity
N-Channel
Power Dissipation
375 W
Threshold Voltage
5 V
Input Capacitance
5380 pF
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
76A
Rise Time
18 ns
Input Capacitance (Ciss)
5380pF @50V(Vds)
Input Power (Max)
375 W
Fall Time
22 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375000 mW

IRFB4127PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB4127PBF Documents

Infineon
8 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRFB4127 Documents

Infineon
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET N-CH 200V 76A TO-220AB
Infineon
TO-220AB N-CH 200V 76A
International Rectifier
Trans MOSFET N-CH 200V 76A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
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