IRFB4227PBF Datasheet PDF - International Rectifier

●"This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications."

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●Features:

● Advanced Process Technology

● Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications

● Low E pulse rating to reduce power dissipation in PDP applications

● Low Qg for fast Response

● High Repetitive Peak current capability for reliable operation

● Short fall & rise times for fast switching

● 175 degC operating junction temperature for improved ruggedness

● Repetitive Avalanche capability for robustness and reliability"