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Part Datasheet Search > MOSFETs > International Rectifier > IRFB59N10DPBF Datasheet PDF
IRFB59N10DPBF
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IRFB59N10DPBF Datasheet PDF (12 Pages)
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IRFB59N10DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
59.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
0.025 mΩ
Polarity
N-Channel
Power Dissipation
200 W
Part Family
IRFB59N10D
Threshold Voltage
5.5 V
Input Capacitance
2450pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
59.0 A
Rise Time
90.0 ns
Input Capacitance (Ciss)
2450pF @25V(Vds)
Input Power (Max)
3.8 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFB59N10DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃

IRFB59N10DPBF Documents

International Rectifier
12 Pages / 0.13 MByte
International Rectifier
20 Pages / 2.6 MByte

IRFB59N10 Documents

International Rectifier
Power MOSFET(Vdss=100V/ Rds(on)max=0.025Ω/ Id=59A)
IRF
Power MOSFET(Vdss=100V, Rds(on)max=0.025Ω, Id=59A)
Infineon
TO-220AB N-CH 100V 59A
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.025Ω; ID 59A; TO-220AB; PD 200W; VGS +/-30V
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 100V 59A
Vishay Semiconductor
MOSFET N-CH 100V 59A TO-220AB
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