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Part Datasheet Search > MOSFETs > Infineon > IRFB7434GPBF Datasheet PDF
IRFB7434GPBF
$ 10.679
IRFB7434GPBF Datasheet PDF (9 Pages)
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IRFB7434GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
1.25 mΩ
Power Dissipation
294 W
Threshold Voltage
2.2 V
Drain to Source Voltage (Vds)
40 V
Breakdown Voltage (Drain to Source)
40 V
Rise Time
68 ns
Input Capacitance (Ciss)
10820pF @25V(Vds)
Fall Time
68 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃

IRFB7434GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Last Time Buy
Packaging
Tube
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃

IRFB7434GPBF Documents

Infineon
9 Pages / 0.28 MByte
Infineon
9 Pages / 0.28 MByte
Infineon
2 Pages / 0.17 MByte

IRFB7434 Documents

Infineon
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
Infineon
TO-220AB N-CH 40V 317A
International Rectifier
TO220/MOSFET, 40V, 195A, 1.6MOHM, 216NC QG
Infineon
MOSFET MOSFET, 40V, 195A, 1 216NC Qg, TO-220AB
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