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IRFB9N60APBF Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220-3 N-CH 600V 9.2A 750mΩ

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRFB9N60APBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFB9N60APBF Application Note (8 Pages)

IRFB9N60APBF Datasheet PDF (9 Pages)

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IRFB9N60APBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

9.20 A

Case/Package

TO-220-3

Power Rating

170 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.75 Ω

Polarity

N-Channel

Power Dissipation

170 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Continuous Drain Current (Ids)

9.20 A

Rise Time

25 ns

Input Capacitance (Ciss)

1400pF @25V(Vds)

Input Power (Max)

170 W

Fall Time

22 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

170 W

View Datasheet >

IRFB9N60APBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

View Datasheet >

IRFB9N60APBF Environmental

IRFB9N60APBF Function Overview

IRFB9N60APBF Documents

IRFB9N60APBF Datasheet

VISHAY

9 Pages / 0.29 MByte

IRFB9N60APBF Other Datasheet PDF

VISHAY

33 Pages / 0.53 MByte

IRFB9N60APBF Application Note

VISHAY

8 Pages / 0.17 MByte

IRFB9N60 Documents

IRFB9N60 Datasheet PDF

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)

IRFB9N60 Datasheet PDF

Vishay Semiconductor

IRFB9N60APBF Datasheet PDF

VISHAY

TO-220-3 N-CH 600V 9.2A 750mΩ

IRFB9N60APBF Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V

IRFB9N60APBF Datasheet PDF

Vishay Siliconix