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Part Datasheet Search > MOSFETs > International Rectifier > IRFB9N60APBF Datasheet PDF
IRFB9N60APBF
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IRFB9N60APBF Datasheet PDF (9 Pages)
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IRFB9N60APBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
600 V
Current Rating
9.20 A
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
170 W
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
9.20 A

IRFB9N60APBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube

IRFB9N60APBF Documents

International Rectifier
9 Pages / 0.27 MByte

IRFB9N60 Documents

IRF
Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)
Vishay Semiconductor
VISHAY
TO-220-3 N-CH 600V 9.2A 750mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
VISHAY
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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