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IRFB9N65APBF Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 650V 8.5A 3Pin(3+Tab) TO-220AB

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3D Model

Symbol

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Documentation:

IRFB9N65APBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFB9N65APBF Datasheet PDF (9 Pages)

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IRFB9N65APBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Polarity

N-Channel

Power Dissipation

167 W

Drain to Source Voltage (Vds)

650 V

Continuous Drain Current (Ids)

8.50 A

Rise Time

20 ns

Input Capacitance (Ciss)

1417pF @25V(Vds)

Input Power (Max)

167 W

Fall Time

18 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

167 W

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IRFB9N65APBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IRFB9N65APBF Environmental

IRFB9N65APBF Function Overview

IRFB9N65APBF Documents

IRFB9N65APBF Datasheet

VISHAY

9 Pages / 0.19 MByte

IRFB9N65APBF Other Datasheet PDF

VISHAY

9 Pages / 0.29 MByte

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Power MOSFET(Vdss=650V, Rds(on)max=0.93Ω, Id=8.5A)

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Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

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