IRFBA1405P Datasheet PDF - International Rectifier

●Description

●Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.

●Benefits

●Advanced Process Technology

●Ultra Low On-Resistance

●Dynamic dv/dt Rating

●175°C Operating Temperature

●Fast Switching

●Repetitive Avalanche Allowed up to Tjmax

●Typical Applications

●Electric Power Steering (EPS)

●Anti-lock Braking System (ABS)

●Wiper Control

●Climate Control

●Power Door