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IRFBC20SPBF
$ 1.993
IRFBC20SPBF Datasheet PDF (11 Pages)
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IRFBC20SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
50 W
Drain to Source Resistance (on) (Rds)
4.4 Ω
Polarity
N-Channel
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
2.20 A
Rise Time
23 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
3.1 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3100 mW

IRFBC20SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRFBC20SPBF Documents

VISHAY
11 Pages / 0.41 MByte
VISHAY
16 Pages / 0.17 MByte

IRFBC20 Documents

International Rectifier
MOSFET N-CH 600V 2.2A TO-220AB
VISHAY
TO-220AB N-CH 600V 2.2A
Vishay Siliconix
MOSFET N-CH 600V 2.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 2.2A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=600V, Rds(on)=4.4Ω, Id=2.2A)
VISHAY
TO-220-3 N-CH 600V 2.2A 4.4Ω
VISHAY
TO-252-3 N-CH 600V 2.2A 4.4Ω
Vishay Semiconductor
VISHAY IRFBC20PBF Power MOSFET, N Channel, 2.2A, 600V, 4.4Ω, 10V, 4V
VISHAY
TO-252-3 N-CH 600V 2.2A 4.4Ω
International Rectifier
MOSFET N-CH 600V 2.2A TO-262
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