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IRFBC30 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-220-3

Description:

N - CHANNEL 600V - 1.8Ω - 3.6A - TO-220 PowerMESH]II MOSFET

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Documentation:

IRFBC30 Datasheet (6 Pages)

IRFBC30 Datasheet PDF (6 Pages)

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IRFBC30 Specifications

TYPE

DESCRIPTION

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

2.20 Ω

Polarity

N-Channel

Power Dissipation

75 W

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

3.60 A

Rise Time

14 ns

Fall Time

19 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

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IRFBC30 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Size-Length

10.4 mm

Size-Width

4.6 mm

Size-Height

9.15 mm

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IRFBC30 Environmental

IRFBC30 Documents

IRFBC30 Datasheet

ST Microelectronics

6 Pages / 0.29 MByte

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