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IRFBC40ASPBF
$ 1.876
IRFBC40ASPBF Datasheet PDF (11 Pages)
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IRFBC40ASPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Input Capacitance
1036pF @25V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
6.20 A
Rise Time
23 ns
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRFBC40ASPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃

IRFBC40ASPBF Documents

Vishay Semiconductor
11 Pages / 0.39 MByte
Vishay Semiconductor
10 Pages / 0.37 MByte

IRFBC40 Documents

International Rectifier
MOSFET N-CH 600V 6.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 6.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
Harris
6.2A and 5.4A, 600V, 1.2 and 1.6Ω, N-Channel Power MOSFETs
VISHAY
TO-220-3 N-CH 600V 6.2A 1.2Ω
VISHAY
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2Ω; ID 6.2A; TO-220AB; PD 125W; VGS +/-30
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2Ω; ID 6.2A; D2Pak; PD 125W; VGS +/-30V
VISHAY
TO-252-3 N-CH 600V 6.2A 1.2Ω
VISHAY
TO-252-3 N-CH 600V 6.2A 1.2Ω
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