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IRFBC40STRLPBF
$ 0.598
IRFBC40STRLPBF Datasheet PDF (8 Pages)
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IRFBC40STRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
6.20 A
Rise Time
18 ns
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
3.1 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3100 mW

IRFBC40STRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRFBC40STRLPBF Documents

VISHAY
8 Pages / 0.99 MByte
VISHAY
8 Pages / 0.94 MByte

IRFBC40 Documents

International Rectifier
MOSFET N-CH 600V 6.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 6.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
Harris
6.2A and 5.4A, 600V, 1.2 and 1.6Ω, N-Channel Power MOSFETs
VISHAY
TO-220-3 N-CH 600V 6.2A 1.2Ω
VISHAY
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2Ω; ID 6.2A; TO-220AB; PD 125W; VGS +/-30
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2Ω; ID 6.2A; D2Pak; PD 125W; VGS +/-30V
VISHAY
TO-252-3 N-CH 600V 6.2A 1.2Ω
VISHAY
TO-252-3 N-CH 600V 6.2A 1.2Ω
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