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IRFBE30 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Description:

Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB

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IRFBE30 Datasheet PDF (9 Pages)

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IRFBE30 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

4.10 A

Drain to Source Resistance (on) (Rds)

3.00 Ω

Polarity

N-Channel

Power Dissipation

125 W

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

4.10 A

Rise Time

33 ns

Fall Time

30 ns

IRFBE30 Environmental

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Vishay Semiconductor

9 Pages / 1.43 MByte

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