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Part Datasheet Search > MOSFETs > VISHAY > IRFBF20SPBF Datasheet PDF
IRFBF20SPBF
$ 0.445
IRFBF20SPBF Datasheet PDF (11 Pages)
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IRFBF20SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
54 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
8 Ω
Polarity
N-Channel
Power Dissipation
54 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
1.70 A
Rise Time
21.0 ns
Input Capacitance (Ciss)
490pF @25V(Vds)
Input Power (Max)
3.1 W
Operating Temperature (Max)
150 ℃

IRFBF20SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRFBF20SPBF Documents

VISHAY
11 Pages / 0.29 MByte
VISHAY
11 Pages / 0.31 MByte

IRFBF20 Documents

International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
MOSFET N-CH 900V 1.7A TO-220AB
Vishay Siliconix
MOSFET N-CH 900V 1.7A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=900V, Rds(on)=8Ω, Id=1.7A)
VISHAY
TO-252-3 N-CH 900V 1.7A 8Ω
VISHAY
TO-220-3 N-CH 900V 1.7A 8Ω
VISHAY
TO-252-3 N-CH 900V 1.7A 8Ω
VISHAY
TO-262-3 N-CH 900V 1.7A 8Ω
Vishay Semiconductor
VISHAY IRFBF20PBF Power MOSFET, N Channel, 1.7A, 900V, 8Ω, 10V, 4V
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