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Part Datasheet Search > MOSFETs > VISHAY > IRFBF30PBF Datasheet PDF
IRFBF30PBF
$ 1.578
IRFBF30PBF Datasheet PDF (9 Pages)
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IRFBF30PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
125 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
3.7 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
3.60 A
Rise Time
25 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Input Power (Max)
125 W
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125 W

IRFBF30PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRFBF30PBF Documents

VISHAY
9 Pages / 1.11 MByte
VISHAY
10 Pages / 0.31 MByte

IRFBF30 Documents

International Rectifier
MOSFET N-CH 900V 3.6A TO-220AB
Vishay Siliconix
Mosfet n-Ch 900V 3.6A To-220ab
VISHAY
TO-220AB N-CH 900V 3.6A
Vishay Semiconductor
MOSFET N-CH 900V 3.6A TO-220AB
IRF
Power MOSFET(Vdss=900V, Rds(on)=3.7Ω, Id=3.6A)
VISHAY
TO-220-3 N-CH 900V 3.6A 3.7Ω
Vishay Semiconductor
VISHAY IRFBF30PBF Power MOSFET, N Channel, 3.6A, 900V, 3.7Ω, 10V, 4V
Vishay Siliconix
Trans MOSFET N-CH 900V 3.6A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET N-CH 900V 3.6A 3Pin(2+Tab) D2PAK T/R
Vishay Siliconix
MOSFET N-CH 900V 3.6A D2PAK
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