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Part Datasheet Search > MOSFETs > International Rectifier > IRFBG20PBF Datasheet PDF
IRFBG20PBF
$ 0.521
IRFBG20PBF Datasheet PDF (8 Pages)
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IRFBG20PBF Specifications

TYPE
DESCRIPTION
Voltage Rating (DC)
1.00 kV
Current Rating
1.40 A
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
54.0 W
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1.00 kV
Continuous Drain Current (Ids)
1.40 A

IRFBG20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk

IRFBG20PBF Documents

International Rectifier
8 Pages / 0.64 MByte

IRFBG20 Documents

International Rectifier
MOSFET N-CH 1000V 1.4A TO-220AB
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MOSFET N-CH 1000V 1.4A TO-220AB
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Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
VISHAY
MOSFET N-CH 1000V 1.4A TO-220AB
IRF
Power MOSFET(Vdss=1000V, Rds(on)=11Ω, Id=1.4A)
VISHAY
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 11Ω; ID 1.4A; TO-220AB; PD 54W; VGS +/-20V
International Rectifier
TO-220-3
Vishay Siliconix
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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