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IRFBG30PBF
$ 1.507
IRFBG30PBF Datasheet PDF (9 Pages)
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IRFBG30PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.00 kV
Current Rating
3.10 A
Case/Package
TO-220-3
Power Rating
125 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
5 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1.00 kV
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
3.10 A
Rise Time
25 ns
Input Capacitance (Ciss)
980pF @25V(Vds)
Input Power (Max)
125 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125 W

IRFBG30PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRFBG30PBF Documents

VISHAY
9 Pages / 1.59 MByte
VISHAY
9 Pages / 1.59 MByte

IRFBG30 Documents

VISHAY
TO-220AB N-CH 1000V 3.1A
Vishay Siliconix
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
Vishay Semiconductor
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
IRF
Power MOSFET(Vdss=1000V, Rds(on)=5Ω, Id=3.1A)
VISHAY
TO-220-3 N-CH 1000V 3.1A 5Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 5Ω; ID 3.1A; TO-220AB; PD 125W; VGS +/-20V
Vishay Siliconix
MOSFET N-CH 1000V 3.1A TO-220AB
International Rectifier
MOSFET N-CH 1000V 3.1A TO-220AB
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 5Ω; ID 3.1A; TO-220AB; PD 125W; VGS +/-20V
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