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Part Datasheet Search > MOSFETs > Infineon > IRFD014PBF Datasheet PDF
IRFD014PBF
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IRFD014PBF Datasheet PDF (9 Pages)
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IRFD014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Voltage Rating (DC)
60.0 V
Current Rating
1.70 A
Case/Package
DIP
Polarity
N-Channel
Power Dissipation
1.30 W
Drain to Source Voltage (Vds)
60.0 V
Breakdown Voltage (Drain to Source)
60.0 V
Continuous Drain Current (Ids)
1.70 A
Rise Time
50.0 ns

IRFD014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk

IRFD014PBF Documents

Infineon
9 Pages / 1.97 MByte

IRFD014 Documents

Vishay Siliconix
MOSFET N-CH 60V 1.7A 4-DIP
VISHAY
MOSFET N-CH 60V 1.7A 4-DIP
Vishay Semiconductor
MOSFET N-CH 60V 1.7A 4-DIP
VISHAY
HVMDIP-4 N-CH 60V 1.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 1.7A 4-DIP
Vishay Semiconductor
VISHAY IRFD014PBF MOSFET Transistor, N Channel, 1.7A, 60V, 200mohm, 10V, 4V
Vishay Intertechnology
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
Vishay Precision Group
MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 1.7A; HD-1; PD 1.3W; VGS +/-20V; Qg 11
Infineon
Trans MOSFET N-CH 60V 1.7A 4Pin HVMDIP
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