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Part Datasheet Search > MOSFETs > International Rectifier > IRFD024PBF Datasheet PDF
IRFD024PBF
Part 3D Model
$ 0.65
IRFD024PBF Datasheet PDF (8 Pages)
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IRFD024PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Voltage Rating (DC)
60.0 V
Current Rating
2.50 A
Case/Package
DIP
Polarity
N-Channel
Power Dissipation
1.30 W
Breakdown Voltage (Drain to Source)
60.0 V
Continuous Drain Current (Ids)
2.50 A
Rise Time
58 ns
Fall Time
42 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1300 mW

IRFD024PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube

IRFD024PBF Documents

International Rectifier
8 Pages / 0.16 MByte

IRFD024 Documents

International Rectifier
MOSFET N-CH 60V 2.5A 4-DIP
VISHAY
HVMDIP-4 N-CH 60V 2.5A 100mΩ
Vishay Siliconix
MOSFET N-CH 60V 2.5A 4-DIP
Vishay Semiconductor
MOSFET N-CH 60V 2.5A 4-DIP
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.1Ω, Id=2.5A)
VISHAY
HVMDIP-4 N-CH 60V 2.5A 10mΩ
Vishay Siliconix
MOSFET N-CH 60V 2.5A 4-DIP
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.1Ω; ID 2.5A; HD-1; PD 1.3W; VGS +/-20V; Qg 25
International Rectifier
MOSFET N-CH 60V 2.5A 4-DIP
Vishay Intertechnology
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, DIP-4
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