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IRFD110PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

DIP-4

Description:

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-20V; VF 2.

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IRFD110PBF Datasheet (10 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFD110PBF Datasheet PDF (10 Pages)

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IRFD110PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

4 Pin

Voltage Rating (DC)

100 V

Current Rating

1.00 A

Case/Package

DIP-4

Power Rating

1.3 W

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

0.54 Ω

Polarity

N-Channel

Power Dissipation

1.3 W

Threshold Voltage

4 V

Input Capacitance

180pF @25V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

1.00 A

Rise Time

16 ns

Input Capacitance (Ciss)

180pF @25V(Vds)

Fall Time

9.4 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.3 W

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IRFD110PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

6.29 mm

Size-Width

6.29 mm

Size-Height

3.37 mm

Operating Temperature

-55℃ ~ 175℃

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IRFD110PBF Environmental

IRFD110PBF Function Overview

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IRFD110PBF Datasheet

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10 Pages / 0.14 MByte

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