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Part Datasheet Search > MOSFETs > VISHAY > IRFD123PBF Datasheet PDF
IRFD123PBF
Part 3D Model
$ 0.548
IRFD123PBF Datasheet PDF (9 Pages)
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IRFD123PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Case/Package
DIP-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.27 Ω
Polarity
N-Channel
Power Dissipation
1.3 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
1.30 A
Rise Time
17 ns
Fall Time
8.9 ns
Operating Temperature (Max)
175 ℃

IRFD123PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃
Minimum Packing Quantity
2500

IRFD123PBF Documents

VISHAY
9 Pages / 1.78 MByte
VISHAY
10 Pages / 0.3 MByte

IRFD123 Documents

Harris
1.3A and 1.1A, 80V and 100V, 0.30 and 0.4Ω, N-Channel Power MOSFETs
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.3A 4Pin HVMDIP
International Rectifier
Power MOSFET
VISHAY
HVMDIP-4 N-CH 200V 600mA 270Ω
Vishay Siliconix
MOSFET N-CH 100V 1.3A 4-DIP
Vishay Semiconductor
VISHAY IRFD123PBF MOSFET Transistor, N Channel, 1.3A, 100V, 270mohm, 10V, 2V
International Rectifier
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