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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFD210PBF Datasheet PDF
IRFD210PBF
$ 0.538
IRFD210PBF Datasheet PDF (9 Pages)
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IRFD210PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1W (Ta)
Drain to Source Voltage (Vds)
200 V
Input Capacitance (Ciss)
140pF @25V(Vds)
Input Power (Max)
1 W
Power Dissipation (Max)
1W (Ta)

IRFD210PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFD210PBF Documents

Vishay Siliconix
9 Pages / 1.66 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFD210 Documents

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0.6A, 200V, 1.5Ω, N-Channel Power MOSFET
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MOSFET N-CH 200V 600mA 4-DIP
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MOSFET N-CH 200V 600mA 4-DIP
VISHAY
HVMDIP-4 N-CH 200V 600mA 1.5Ω
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Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5Ω; ID 0.6A; HD-1; PD 1W; VGS +/-20V; VF 2
Vishay Intertechnology
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