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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFD220PBF Datasheet PDF
IRFD220PBF
$ 1.963
IRFD220PBF Datasheet PDF (9 Pages)
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IRFD220PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1W (Ta)
Drain to Source Voltage (Vds)
200 V
Input Capacitance (Ciss)
260pF @25V(Vds)
Input Power (Max)
1 W
Power Dissipation (Max)
1W (Ta)

IRFD220PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFD220PBF Documents

Vishay Siliconix
9 Pages / 1.84 MByte
Vishay Siliconix
9 Pages / 1.84 MByte

IRFD220 Documents

International Rectifier
Trans MOSFET N-CH 200V 0.8A 4Pin HVMDIP Trans MOSFET N-CH 200V 0.8A 4Pin HVMDIP Trans MOSFET N-CH 200V 0.8A 4Pin H...
Vishay Siliconix
MOSFET N-CH 200V 800mA 4-DIP
Fairchild
Trans MOSFET N-CH Si 200V 0.8A 4Pin HexDIP
Vishay Semiconductor
MOSFET N-CH 200V 800mA 4-DIP
VISHAY
MOSFET N-CH 200V 800mA 4-DIP
VISHAY
HVMDIP-4 N-CH 200V 800mA 800mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ω; ID 0.8A; HD-1; PD 1W; VGS +/-20V; gFS 0.
Vishay Siliconix
MOSFET N-CH 200V 800mA 4-DIP
International Rectifier
MOSFET N-CH 200V 800mA 4-DIP
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ω; ID 0.8A; HD-1; PD 1W; VGS +/-20V; gFS 0.
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