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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFD9014PBF Datasheet PDF
IRFD9014PBF
$ 0.538

IRFD9014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1.3W (Ta)
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
270pF @25V(Vds)
Input Power (Max)
1.3 W
Power Dissipation (Max)
1.3W (Ta)

IRFD9014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFD9014PBF Documents

Vishay Siliconix
9 Pages / 1.71 MByte
Vishay Siliconix
9 Pages / 1.7 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFD9014 Documents

VISHAY
MOSFET P-CH 60V 1.1A 4-DIP
Vishay Siliconix
MOSFET P-CH 60V 1.1A 4-DIP
Vishay Semiconductor
MOSFET P-CH 60V 1.1A 4-DIP
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.5Ω, Id=-1.1A)
VISHAY
HVMDIP-4P-CH 60V 1.1A 500mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ω; ID -1.1A; HD-1; PD 1.3W; VGS +/-20V; -55
Vishay Siliconix
MOSFET P-CH 60V 1.1A 4-DIP
Vishay Intertechnology
Power Field-Effect Transistor, 1.1A I(D), 60V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
International Rectifier
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