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IRFD9024PBF Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

DIP-4

Description:

MOSFET P-CH 60V 1.6A 4-DIP

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IRFD9024PBF Datasheet PDF (9 Pages)

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IRFD9024PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

DIP-4

Power Dissipation

1.3 W

Drain to Source Voltage (Vds)

60 V

Rise Time

68 ns

Input Capacitance (Ciss)

570pF @25V(Vds)

Input Power (Max)

1.3 W

Fall Time

29 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.3W (Ta)

IRFD9024PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

IRFD9024PBF Environmental

IRFD9024PBF Function Overview

IRFD9024PBF Documents

IRFD9024PBF Other Datasheet PDF

Vishay Siliconix

9 Pages / 1.64 MByte

IRFD9024PBF Other References

Vishay Siliconix

1 Pages / 0.13 MByte

IRFD9024 Documents

IRFD9024 Datasheet PDF

Vishay Siliconix

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024 Datasheet PDF

International Rectifier

-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package

IRFD9024 Datasheet PDF

VISHAY

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024 Datasheet PDF

Vishay Semiconductor

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024 Datasheet PDF

IRF

Power MOSFET(Vdss=-60V, Rds(on)=0.28Ω, Id=-1.6A)

IRFD9024PBF Datasheet PDF

VISHAY

HVMDIP-4P-CH 60V 1.6A 280mΩ

IRFD9024PBF Datasheet PDF

Vishay Semiconductor

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.28Ω; ID -1.6A; HD-1; PD 1.3W; VGS +/-20V

IRFD9024PBF Datasheet PDF

Vishay Siliconix

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024PBF Datasheet PDF

International Rectifier

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024PBF Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 1.6A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4

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