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Part Datasheet Search > MOSFETs > VISHAY > IRFDC20PBF Datasheet PDF
IRFDC20PBF
Part 3D Model
$ 0.118
IRFDC20PBF Datasheet PDF (9 Pages)
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IRFDC20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
320 mA
Case/Package
DIP-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
4.4 Ω
Polarity
N-Channel
Power Dissipation
1 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
320 mA
Rise Time
23 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
1 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000 mW

IRFDC20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRFDC20PBF Documents

VISHAY
9 Pages / 1.15 MByte

IRFDC20 Documents

Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Semiconductor
MOSFET N-CH 600V 320mA 4-DIP
International Rectifier
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
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