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Part Datasheet Search > MOSFETs > Infineon > IRFH3702TRPBF Datasheet PDF
IRFH3702TRPBF
Part 3D Model
$ 0.251
IRFH3702TRPBF Datasheet PDF (10 Pages)
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IRFH3702TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
QFN-8
Power Rating
2.8 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0057 Ω
Polarity
N-CH
Power Dissipation
2.8 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
16A
Rise Time
15 ns
Input Capacitance (Ciss)
1510pF @15V(Vds)
Input Power (Max)
2.8 W
Fall Time
5.8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.8W (Ta)

IRFH3702TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3 mm
Size-Width
3 mm
Size-Height
0.95 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH3702TRPBF Documents

Infineon
10 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRFH3702 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
Infineon
PQFN N-CH 30V 16A
International Rectifier
Trans MOSFET N-CH 30V 16A 8Pin PQFN EP T/R
International Rectifier
Single N-Channel 30V 2.8W 9.6NC SMT Hexfet Power Mosfet - PQFN 3 x 3mm
Infineon
PQFN N-CH 30V 16A
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