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Part Datasheet Search > MOSFETs > Infineon > IRFH5010TRPBF Datasheet PDF
IRFH5010TRPBF
$ 0.696
IRFH5010TRPBF Datasheet PDF (9 Pages)
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IRFH5010TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerVDFN-8
Power Rating
250 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0075 Ω
Polarity
N-Channel
Power Dissipation
3.6 W
Part Family
IRFH5010
Threshold Voltage
2 V
Input Capacitance
4340 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
100 A
Rise Time
12 ns
Input Capacitance (Ciss)
4340pF @25V(Vds)
Fall Time
8.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta), 250W (Tc)

IRFH5010TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6 mm
Size-Width
5 mm
Size-Height
0.85 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH5010TRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
2 Pages / 0.04 MByte

IRFH5010 Documents

Infineon
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
Infineon
PQFN N-CH 100V 13A
International Rectifier
Single N-Channel 100V 3.6W 65NC SMT HexFet Power Mosfet - PQFN 5 x 6mm
Infineon
PQFN N-CH 100V 13A
International Rectifier
Trans MOSFET N-CH 100V 13A 8Pin PQFN EP T/R
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