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Part Datasheet Search > MOSFETs > Infineon > IRFH5020TRPBF Datasheet PDF
IRFH5020TRPBF
$ 0.862
IRFH5020TRPBF Datasheet PDF (9 Pages)
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IRFH5020TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PQFN-8
Power Rating
3.6 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.047 Ω
Polarity
N-Channel
Power Dissipation
3.6 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
5.1A
Rise Time
7.7 ns
Input Capacitance (Ciss)
2290pF @100V(Vds)
Input Power (Max)
3.6 W
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta)

IRFH5020TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Width
5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH5020TRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRFH5020 Documents

Infineon
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Infineon
PQFN N-CH 200V 5.1A
International Rectifier
Single N-Channel 200V 55 mO 36NC SMT Hexfet Power Mosfet - PQFN 5 x 6mm
International Rectifier
MOSFET N-CH 200V 5.1A 8VQFN
Infineon
PQFN N-CH 200V 5.1A
International Rectifier
HEXFET Power MOSFET
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