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Part Datasheet Search > MOSFETs > Infineon > IRFH5053TRPBF Datasheet PDF
IRFH5053TRPBF
$ 1.038
IRFH5053TRPBF Datasheet PDF (2 Pages)
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IRFH5053TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerVDFN-8
Power Rating
3.1 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0144 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Part Family
IRFH5053
Threshold Voltage
3.7 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
9.30 A, 9.30 mA
Rise Time
14.6 ns
Input Capacitance (Ciss)
1510pF @50V(Vds)
Input Power (Max)
3.1 W
Fall Time
9.9 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
3.1W (Ta), 8.3W (Tc)

IRFH5053TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH5053TRPBF Documents

Infineon
2 Pages / 0.19 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.14 MByte

IRFH5053 Documents

Infineon
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
Infineon
PQFN N-CH 100V 25A
International Rectifier
Trans MOSFET N-CH 100V 25A 8Pin PQFN T/R
Infineon
PQFN N-CH 100V 25A
International Rectifier
Trans MOSFET N-CH 100V 25A 8Pin PQFN T/R
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