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Part Datasheet Search > MOSFETs > Infineon > IRFH5110TRPBF Datasheet PDF
IRFH5110TRPBF
$ 0.953
IRFH5110TRPBF Datasheet PDF (9 Pages)
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IRFH5110TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
QFN-8
Power Rating
3.6 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0103 Ω
Polarity
N-Channel
Power Dissipation
114 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
11A
Rise Time
9.6 ns
Input Capacitance (Ciss)
3152pF @25V(Vds)
Input Power (Max)
3.6 W
Fall Time
6.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta), 114W (Tc)

IRFH5110TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH5110TRPBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRFH5110 Documents

Infineon
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
Infineon
PQFN N-CH 10V 11A
International Rectifier
Trans MOSFET N-CH 10V 11A 8Pin PQFN EP T/R
International Rectifier
Trans MOSFET N-CH 10V 11A 8Pin PQFN EP T/R
Infineon
PQFN N-CH 10V 11A
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