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Part Datasheet Search > MOSFETs > Infineon > IRFH6200TRPBF Datasheet PDF
IRFH6200TRPBF
$ 0.783
IRFH6200TRPBF Datasheet PDF (9 Pages)
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IRFH6200TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
QFN-8
Power Rating
3.6 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0012 Ω
Polarity
N-Channel
Power Dissipation
156 W
Threshold Voltage
800 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
45A
Rise Time
74 ns
Input Capacitance (Ciss)
10890pF @10V(Vds)
Fall Time
160 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta), 156W (Tc)

IRFH6200TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6 mm
Size-Width
5 mm
Size-Height
0.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH6200TRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
25 Pages / 0.26 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.07 MByte
Infineon
6 Pages / 0.11 MByte

IRFH6200 Documents

Infineon
20V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Infineon
PQFN N-CH 20V 45A
International Rectifier
Trans MOSFET N-CH 20V 45A 8Pin PQFN EP T/R
International Rectifier
Single N-Channel 20V 3.6W 155NC SMT HexFet Power Mosfet - PQFN 5 x 6mm
Infineon
PQFN N-CH 20V 45A
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