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Part Datasheet Search > MOSFETs > Infineon > IRFH8311TRPBF Datasheet PDF
IRFH8311TRPBF
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IRFH8311TRPBF Datasheet PDF (9 Pages)
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IRFH8311TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
3.6 W
Number of Channels
1 Channel
Number of Positions
5 Position
Drain to Source Resistance (on) (Rds)
0.0017 Ω
Polarity
N-CH
Power Dissipation
3.6 W
Threshold Voltage
1.35V ~ 2.35V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
32A
Rise Time
26 ns
Input Capacitance (Ciss)
4960pF @10V(Vds)
Input Power (Max)
3.6 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta), 96W (Tc)

IRFH8311TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Width
5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH8311TRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRFH8311 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Infineon
QFN N-CH 30V 32A
International Rectifier
Trans MOSFET N-CH 30V 32A 8Pin QFN EP T/R
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