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Part Datasheet Search > MOSFETs > Infineon > IRFHM792TRPBF Datasheet PDF
IRFHM792TRPBF
$ 0.511
IRFHM792TRPBF Datasheet PDF (9 Pages)
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IRFHM792TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
Power-8
Polarity
N-CH
Power Dissipation
2.3 W
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
2.3A
Rise Time
4.7 ns
Input Capacitance (Ciss)
251pF @25V(Vds)
Input Power (Max)
2.3 W
Fall Time
2.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.3 W

IRFHM792TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFHM792TRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRFHM792 Documents

Infineon
100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
Infineon
PQFN N-CH 100V 2.3A
Infineon
PQFN N-CH 100V 2.3A
International Rectifier
Trans MOSFET N-CH 100V 2.3A 8Pin PQFN EP T/R
International Rectifier
100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
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