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Part Datasheet Search > MOSFETs > Infineon > IRFHS8342TRPBF Datasheet PDF
IRFHS8342TRPBF
$ 0.169
IRFHS8342TRPBF Datasheet PDF (9 Pages)
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IRFHS8342TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
PQFN-8
Power Rating
2.1 W
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.013 Ω
Polarity
N-Channel
Power Dissipation
2.1 W
Part Family
IRFHS8342
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
8.8A
Rise Time
15 ns
Input Capacitance (Ciss)
600pF @25V(Vds)
Input Power (Max)
2.1 W
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.1W (Ta)

IRFHS8342TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFHS8342TRPBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
9 Pages / 0.23 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.1 MByte

IRFHS8342 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package
Infineon
PQFN N-CH 30V 8.8A
International Rectifier
Trans MOSFET N-CH 30V 8.8A 6Pin PQFN EP T/R
International Rectifier
Trans MOSFET N-CH 30V 8.8A 6Pin PQFN EP T/R
Infineon
PQFN N-CH 30V 8.8A
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