IRFI4019H-117P Datasheet PDF - Infineon

●The IRFI4019H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 200W per channel into 8R load in half-bridge configuration amplifier.

● Reduces the part count by half

● Facilitates better PCB layout

● Low RDS (ON) for improved efficiency

● Low Qg and Qsw for better THD and improved efficiency

● Low Qrr for better THD and lower EMI