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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFI830GPBF Datasheet PDF
IRFI830GPBF
$ 6.065

IRFI830GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
35000 mW
Drain to Source Voltage (Vds)
500 V
Rise Time
16 ns
Input Capacitance (Ciss)
610pF @25V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
35W (Tc)

IRFI830GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFI830GPBF Documents

Vishay Siliconix
10 Pages / 0.88 MByte
Vishay Siliconix
8 Pages / 1.5 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFI830 Documents

VISHAY
TO-220-3 N-CH 500V 3.1A 1.5Ω
Vishay Semiconductor
Trans MOSFET N-CH 500V 3.1A 3Pin(3+Tab) TO-220FP
VISHAY
TO-220-3 N-CH 500V 3.1A 1.5Ω
Vishay Siliconix
MOSFET N-CH 500V 3.1A TO220FP
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package0
Vishay Siliconix
Mosfet n-Ch 500V 3.1A To220fp
Vishay Semiconductor
Trans MOSFET N-CH 500V 3.1A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Fairchild
500V N-Channel B-FET / Substitute of IRFI830A\
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