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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFI840G Datasheet PDF
IRFI840G
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IRFI840G Datasheet PDF (9 Pages)
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IRFI840G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Power Dissipation
40W (Tc)
Drain to Source Voltage (Vds)
500 V
Input Capacitance (Ciss)
1300pF @25V(Vds)
Power Dissipation (Max)
40W (Tc)

IRFI840G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Width
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFI840G Documents

Vishay Siliconix
9 Pages / 2.72 MByte
Vishay Siliconix
8 Pages / 2.72 MByte

IRFI840 Documents

VISHAY
TO-220-3 N-CH 500V 4.6A 850mΩ
VISHAY
TO-220-3 N-CH 500V 4.5A 850mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.85Ω; ID 4.6A; TO-220 Full-Pak; PD 40W
Vishay Siliconix
MOSFET N-CH 500V 4.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220FP
Vishay Siliconix
Trans MOSFET N-CH 500V 4.6A 3Pin(3+Tab) TO-220 Full-Pak
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package0
International Rectifier
MOSFET N-CH 500V 4.5A TO220FP
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Vishay Siliconix
MOSFET N-CH 500V 4.6A TO220FP
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