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IRFIBE20G
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IRFIBE20G Datasheet PDF (9 Pages)
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IRFIBE20G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Power Dissipation
30W (Tc)
Drain to Source Voltage (Vds)
800 V
Input Capacitance (Ciss)
530pF @25V(Vds)
Input Power (Max)
30 W
Power Dissipation (Max)
30W (Tc)

IRFIBE20G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Width
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFIBE20G Documents

Vishay Siliconix
9 Pages / 1.5 MByte
Vishay Siliconix
8 Pages / 1.49 MByte

IRFIBE20 Documents

VISHAY
TO-220-3 N-CH 800V 1.4A 6.5Ω
International Rectifier
MOSFET N-CH 800V 1.4A TO220FP
VISHAY
TO-220FP N-CH 800V 1.4A
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 6.5Ω; ID 1.4A; TO-220 Full-Pak; PD 30W
Vishay Siliconix
MOSFET N-CH 800V 1.4A TO220FP
Vishay Siliconix
MOSFET N-CH 800V 1.4A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 800V 1.4A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 1.4A I(D), 800V, 6.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 6.5Ω; ID 1.4A; TO-220 Full-Pak; PD 30W
IRF
Power MOSFET(Vdss=800V, Rds(on)=6.5Ω, Id=1.4A)
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