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Part Datasheet Search > MOSFETs > VISHAY > IRFIBE30GPBF Datasheet PDF
IRFIBE30GPBF
$ 2.004
IRFIBE30GPBF Datasheet PDF (7 Pages)
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IRFIBE30GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
3 Ω
Polarity
N-Channel
Power Dissipation
35 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
2.10 A
Rise Time
33 ns
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
35 W
Fall Time
30 ns
Operating Temperature (Max)
150 ℃

IRFIBE30GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRFIBE30GPBF Documents

VISHAY
7 Pages / 1.36 MByte
VISHAY
2 Pages / 0.12 MByte

IRFIBE30 Documents

IRF
Power MOSFET(Vdss=800V, Rds(on)=3Ω, Id=2.1A)
VISHAY
TO-220-3 N-CH 800V 2.1A 3Ω
Vishay Semiconductor
VISHAY IRFIBE30GPBF Power MOSFET, N Channel, 2.1A, 800V, 3Ω, 10V, 4V
Vishay Siliconix
MOSFET N-CH 800V 2.1A TO220FP
International Rectifier
HEXFET POWER MOSFET
International Rectifier
HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3Ω, ID = 2.1A
Vishay Siliconix
MOSFET N-CH 800V 2.1A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 800V 2.1A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 2.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
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