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Part Datasheet Search > MOSFETs > Infineon > IRFIZ48VPBF Datasheet PDF
IRFIZ48VPBF
$ 0.131
IRFIZ48VPBF Datasheet PDF (9 Pages)
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IRFIZ48VPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Polarity
N-CH
Power Dissipation
43W (Tc)
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
39A
Rise Time
200 ns
Input Capacitance (Ciss)
1985pF @25V(Vds)
Input Power (Max)
43 W
Fall Time
166 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
43W (Tc)

IRFIZ48VPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFIZ48VPBF Documents

Infineon
9 Pages / 0.2 MByte
Infineon
9 Pages / 0.09 MByte
Infineon
1 Pages / 0.12 MByte

IRFIZ48 Documents

International Rectifier
HEXFET® Power MOSFET VDSS= 55V RDS(on)= 0.016Ω ID= 36A
IRF
Power MOSFET(Vdss=55V, Rds(on)=0.016Ω, Id=36A)
Infineon
TO-220FP N-CH 55V 36A
VISHAY
TO-220-3 N-CH 60V 37A 18mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.016Ω; ID 36A; TO-220 Full-Pak; PD 42W; -55de
Infineon
TO-220FP N-CH 60V 39A
International Rectifier
MOSFET N-CH 55V 36A TO220FP
International Rectifier
Trans MOSFET N-CH Si 60V 39A 3Pin(3+Tab) TO-220FP
VISHAY
TO-220FP N-CH 60V 37A
Vishay Semiconductor
Trans MOSFET N-CH 60V 37A 3Pin(3+Tab) TO-220FP
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