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IRFL014PBF
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IRFL014PBF Datasheet PDF (9 Pages)
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IRFL014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-261-4
Power Dissipation
2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
300pF @25V(Vds)
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)

IRFL014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFL014PBF Documents

Vishay Siliconix
9 Pages / 0.28 MByte
Vishay Siliconix
9 Pages / 0.28 MByte
Vishay Siliconix
6 Pages / 0.21 MByte

IRFL014 Documents

VISHAY
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
International Rectifier
Transistor NPN MOS IRFL014 INTERNATIONAL RECTIFIER RoHS Ampere=2.7V=60 SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
Infineon
SOT-223 N-CH 55V 2.7A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.16Ω; ID 1.9A; SOT-223; PD 2.1W; VGS +/-20V
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Infineon
SOT-223 N-CH 55V 2.7A
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