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IRFL014PBF
$ 0.304
IRFL014PBF Datasheet PDF (9 Pages)
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IRFL014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
2.70 A
Case/Package
TO-261-4
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Continuous Drain Current (Ids)
2.70 A
Rise Time
50.0 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRFL014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.7 mm
Size-Width
3.7 mm
Size-Height
1.45 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFL014PBF Documents

VISHAY
9 Pages / 0.28 MByte
VISHAY
10 Pages / 0.15 MByte

IRFL014 Documents

VISHAY
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
International Rectifier
Transistor NPN MOS IRFL014 INTERNATIONAL RECTIFIER RoHS Ampere=2.7V=60 SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
Infineon
SOT-223 N-CH 55V 2.7A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.16Ω; ID 1.9A; SOT-223; PD 2.1W; VGS +/-20V
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Infineon
SOT-223 N-CH 55V 2.7A
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