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IRFL110PBF
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IRFL110PBF Datasheet PDF (9 Pages)
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IRFL110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-261-4
Power Dissipation
2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
180pF @25V(Vds)
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)

IRFL110PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFL110PBF Documents

Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
6 Pages / 0.21 MByte

IRFL110 Documents

International Rectifier
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 Trans MOSFET N-CH 1...
VISHAY
SOT-223 N-CH 100V 1.5A
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223
VISHAY
SOT-223-3 N-CH 100V 1.5A 540mΩ
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223 N-CH 100V 1.5A
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1.5A; SOT-223; PD 3.1W; VGS +/-20V
International Rectifier
MOSFET N-CH 100V 1.5A SOT223
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