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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFL9110PBF Datasheet PDF
IRFL9110PBF
$ 0.625
IRFL9110PBF Datasheet PDF (9 Pages)
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IRFL9110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-261-4
Power Dissipation
2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
200pF @25V(Vds)
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)

IRFL9110PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFL9110PBF Documents

Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
6 Pages / 0.21 MByte

IRFL9110 Documents

VISHAY
SOT-223P-CH 100V 1.1A
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Intertechnology
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
VISHAY
SOT-223-3P-CH 100V 1.1A 1.2Ω
Vishay Siliconix
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
VISHAY
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -1.1A; SOT-223; PD 3.1W; VGS +/-2
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
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