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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRFL9110TRPBF Datasheet PDF
IRFL9110TRPBF
$ 0.211
IRFL9110TRPBF Datasheet PDF (9 Pages)
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IRFL9110TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-223
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
P-Channel
Power Dissipation
2 W
Drain to Source Voltage (Vds)
-100 V
Continuous Drain Current (Ids)
-1.10 A
Input Capacitance (Ciss)
200pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1 W

IRFL9110TRPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
6.7 mm
Size-Width
3.7 mm
Size-Height
1.8 mm

IRFL9110TRPBF Documents

Vishay Semiconductor
9 Pages / 0.34 MByte
Vishay Semiconductor
8 Pages / 0.58 MByte

IRFL9110 Documents

VISHAY
SOT-223P-CH 100V 1.1A
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Intertechnology
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
VISHAY
SOT-223-3P-CH 100V 1.1A 1.2Ω
Vishay Siliconix
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
VISHAY
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223
Vishay Semiconductor
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -1.1A; SOT-223; PD 3.1W; VGS +/-2
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
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