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IRFP054N
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IRFP054N Datasheet PDF (9 Pages)
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IRFP054N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
55.0 V
Current Rating
72.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
12.0 mΩ (max)
Polarity
N-CH
Power Dissipation
170W (Tc)
Part Family
IRFP054N
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55.0V (min)
Continuous Drain Current (Ids)
81.0 A
Rise Time
66 ns
Input Capacitance (Ciss)
2900pF @25V(Vds)
Fall Time
46 ns
Power Dissipation (Max)
170W (Tc)

IRFP054N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFP054N Documents

Infineon
9 Pages / 0.11 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFP054 Documents

International Rectifier
MOSFET N-CH 60V 70A TO-247AC
VISHAY
TO-247AC N-CH 60V 70A
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
Infineon
Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.014Ω, Id=70*A)
Vishay Intertechnology
Infineon
TO-247AC N-CH 55V 81A
VISHAY
TO-247-3 N-CH 60V 70A 14mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.012Ω; ID 81A; TO-247AC; PD 170W; VGS +/-20V
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