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Part Datasheet Search > MOSFETs > International Rectifier > IRFP064NPBF Datasheet PDF
IRFP064NPBF
$ 0.611
IRFP064NPBF Datasheet PDF (8 Pages)
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IRFP064NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
55.0 V
Current Rating
110 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.008 Ω
Polarity
N-Channel
Power Dissipation
200 W
Part Family
IRFP064N
Threshold Voltage
4 V
Input Capacitance
4000pF @25V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
110 A
Rise Time
100 ns
Input Capacitance (Ciss)
4000pF @25V(Vds)
Input Power (Max)
200 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFP064NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
15.9 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 175℃

IRFP064NPBF Documents

International Rectifier
8 Pages / 0.28 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
27 Pages / 1.55 MByte
International Rectifier
3 Pages / 0.03 MByte
International Rectifier
9 Pages / 2.48 MByte

IRFP064 Documents

Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
VISHAY
TO-247AC N-CH 60V 70A
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009Ω, ID = 70A
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Infineon
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.009Ω, Id=70*A)
Infineon
TO-247AC N-CH 55V 110A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 110A; TO-247AC; PD 200W; VGS +/-20V
VISHAY
TO-247-3 N-CH 100V 70A 77mΩ
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