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Part Datasheet Search > MOSFETs > Fairchild > IRFP150A Datasheet PDF
IRFP150A
$ 1.32
IRFP150A Datasheet PDF (7 Pages)
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IRFP150A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
40.0 mΩ
Polarity
N-Channel
Power Dissipation
193 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
43.0 A
Rise Time
20 ns
Input Capacitance (Ciss)
2270pF @25V(Vds)
Input Power (Max)
193 W
Fall Time
45 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
193W (Tc)

IRFP150A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Rail, Tube
Size-Length
16.2 mm
Size-Width
5 mm
Size-Height
20.1 mm
Operating Temperature
-55℃ ~ 175℃

IRFP150A Documents

Fairchild
7 Pages / 0.25 MByte
Fairchild
10 Pages / 0.99 MByte
Fairchild
4 Pages / 0.62 MByte

IRFP150 Documents

International Rectifier
MOSFET N-CH 100V 41A TO-247AC
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
IXYS Semiconductor
HIGH VOLTAGE POWER MOSFET DIE
Vishay Siliconix
MOSFET N-CH 100V 41A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
Harris
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Fairchild
Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247
Intersil
40A 100V 0.055Ω N-CH, Si PMOS TO-247
ST Microelectronics
40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
Samsung
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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