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Part Datasheet Search > MOSFETs > Infineon > IRFP250MPBF Datasheet PDF
IRFP250MPBF
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IRFP250MPBF Datasheet PDF (8 Pages)
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IRFP250MPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
214 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.075 Ω
Polarity
N-Channel
Power Dissipation
214 W
Threshold Voltage
4 V
Input Capacitance
2159 pF
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
30A
Rise Time
43 ns
Reverse recovery time
186 ns
Maximum Forward Voltage (Max)
1.3 V
Input Capacitance (Ciss)
2159pF @25V(Vds)
Input Power (Max)
214 W
Fall Time
33 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 175℃
Power Dissipation (Max)
214W (Tc)

IRFP250MPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.2 mm
Size-Height
21.1 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFP250MPBF Documents

Infineon
8 Pages / 0.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRFP250 Documents

IXYS Semiconductor
Trans MOSFET N-CH Si 200V 30A 3Pin(3+Tab) TO-247AD
ST Microelectronics
MOSFET N-CH 200V 33A TO-247
International Rectifier
N-Channel MOSFET, Vdss = 200V, Rds = 0.085Ω, Id = 30A, TO-247AC
VISHAY
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Fairchild
Trans MOSFET N-CH Si 200V 33A 3Pin(3+Tab) TO-247
Infineon
MOSFET N-CH 200V 33A TO-247
Samsung
N-channel power MOSFET, 200V, 30A
Harris
Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Intersil
33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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